document number: 94393 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 phase control thyristors (stud version), 110 a st110spbf series vishay semiconductors features ?center gate ? international standard case to-209ac (to-94) ? compression bonded encapsulation for heavy duty operations such as severe thermal cycling ? hermetic glass-metal case with ceramic insulator (glass-metal seal over 1200 v) ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level typical applications ? dc motor controls ? controlled dc power supplies ? ac controllers electrical specifications product summary i t(av) 110 a to-209ac (to-94) major ratings and characteristics parameter test conditions values units i t(av) 110 a t c 90 c i t(rms) 175 a i tsm 50 hz 2700 60 hz 2830 i 2 t 50 hz 36.4 ka 2 s 60 hz 33.2 v drm /v rrm 400 to 1600 v t q typical 100 s t j - 40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma st110s 04 400 500 20 08 800 900 12 1200 1300 16 1600 1700
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94393 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-aug-10 st110spbf series vishay semiconductors phase control thyristors (stud version), 110 a absolute maximum ratings parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 110 a 90 c maximum rms on-state current i t(rms) dc at 85 c case temperature 175 a maximum peak, one-cycle non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 2700 t = 8.3 ms 2830 t = 10 ms 100 % v rrm reapplied 2270 t = 8.3 ms 2380 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 36.4 ka 2 s t = 8.3 ms 33.2 t = 10 ms 100 % v rrm reapplied 25.8 t = 8.3 ms 23.5 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 364 ka 2 ? s low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.90 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 0.92 low level value of on-state slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 1.79 m ? high level value of on-state slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 1.81 maximum on-state voltage v tm i pk = 350 a, t j = t j maximum, t p = 10 ms sine pulse 1.52 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 600 ma typical latching current i l 1000 switching parameter symbol test conditions values units maximum non-repe titive rate of rise of turned-on current di/dt gate drive 20 v, 20 ? , t r ? 1 s t j = t j maximum, anode voltage ? 80 % v drm 500 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s v d = 0.67 % v drm , t j = 25 c 2.0 s typical turn-off time t q i tm = 100 a, t j = t j maximum, di/dt = 10 a/s, v r = 50 v, dv/dt = 20 v/s, gate 0 v 100 ? , t p = 500 s 100 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum linear to 80 % rated v drm 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 20 ma
document number: 94393 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 st110spbf series phase control thyristors (stud version), 110 a vishay semiconductors triggering parameter symbol test conditions values units typ. max. maximum peak gate power p gm t j = t j maximum, t p ? 5 ms 5 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 1 maximum peak positi ve gate current i gm t j = t j maximum, t p ? 5 ms 2.0 a maximum peak positive gate voltage + v gm 20 v maximum peak negative gate voltage - v gm 5.0 dc gate current required to trigger i gt t j = - 40 c maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 6 v anode to cathode applied 180 - ma t j = 25 c 90 150 t j = 125 c 40 - dc gate voltage required to trigger v gt t j = - 40 c 2.9 - v t j = 25 c 1.8 3.0 t j = 125 c 1.2 - dc gate current not to trigger i gd t j = t j maximum maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 10 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to case r thjc dc operation 0.195 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.08 mounting torque, 10 % non-lubricated threads 15.5 (137) nm (lbf in) lubricated threads 14 (120) approximate weight 130 g case style see di mensions - link at the end of datasheet to-209ac (to-94)
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94393 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-aug-10 st110spbf series vishay semiconductors phase control thyristors (stud version), 110 a note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state po wer loss characteristics ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.035 0.025 t j = t j maximum k/w 120 0.041 0.042 90 0.052 0.056 60 0.076 0.079 30 0.126 0.127 80 90 100 110 120 130 0 20406080100120 maximum allowable case temperature (c) 30 60 90 120 180 average on-state current (a) conduction angle st110s series r (dc) = 0.195 k/w thjc 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 180 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period st110s series r (dc) = 1.95 k/w thjc 25 50 75 100 125 maximum allowable ambient temperature (c) r = 0 . 1 k / w - d e l t a r 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 5 k / w 0 . 6 k / w 1 k / w 0 . 8 k / w 1 . 2 k / w t h s a 0 20 40 60 80 100 120 140 160 020406080100120 180 120 90 60 30 rms limit conduction angle maximum average on-state power loss (w) average on-state current (a) st110s series t = 125c j
document number: 94393 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 st110spbf series phase control thyristors (stud version), 110 a vishay semiconductors fig. 4 - on-state power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state volt age drop characteristics 25 50 75 100 125 maximum allowable ambient temperature (c) r = 0 . 1 k/ w - d e l t a r t h s a 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 6 k / w 0 . 8 k / w 1 k / w 0 . 5 k / w 1 . 2 k / w 0 20 40 60 80 100 120 140 160 180 200 220 0 20 40 60 80 100 120 140 160 180 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) st110s series t = 125c j 1000 1200 1400 1600 1800 2000 2200 2400 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s st110s series j at any rated load condition and with rated v applied following surge. rrm 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 0.01 0.1 1 10 pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. peak half sine wave on-state current (a) initial t = 125c no voltage reapplied rated v reapplied j rrm st110s series instantaneous on-state voltage (v) instantaneous on-state current (a) 10 100 1000 10000 0.5 1.5 2.5 3.5 4.5 tj = 25?c tj = 125?c st110s series
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94393 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-aug-10 st110spbf series vishay semiconductors phase control thyristors (stud version), 110 a fig. 8 - thermal impedance z thjc characteristic fig. 9 - gate characteristics 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thjc transient thermal impedance z (k/w) st110s series steady state value r = 0.195 k/w (dc operation) thjc 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd igd (b) (a) tj=25 c tj=125 c tj=-40 c (1) (2) (3) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for <=30% rated di/dt : 10v, 10ohms frequency limited by pg(av) rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, tp = 0.66ms device: st110s series rectangular gate pulse (4)
document number: 94393 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 st110spbf series phase control thyristors (stud version), 110 a vishay semiconductors ordering information table links to related documents dimensions www.vishay.com/doc?95078 1 - thyristor 2 - essential part marking 3 - 0 = converter grade 4 10 - lead (pb)-free - s = compression bonding stud 8 - v = glass-metal seal (only up to 1200 v) 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 - p = stud base 20unf threads 7 - 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast-on terminals (gate and auxiliary cathode leads) 2 = flag terminals (for cathode and gate terminals) 9 - critical dv/dt: none = ceramic housing (over 1200 v) none = 500 v/s (standard value) l = 1000 v/s (special selection) device code 5 1 3 2 4 6 7 8 9 10 st 11 0 s 16 p 0 v l pbf
document number: 95078 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 23-sep-08 1 to-209ac (to-94) for st110s series outline dimensions vishay semiconductors dimensions in millimeters (inches) fast-on terminals c.s. 0.4 mm 2 white shrink red shrink red cathode red silicon rubber ? 4.3 (0.17) 12.5 (0.49) max. (0.0006 s.i.) glass metal seal ? 8.5 (0.33) 16.5 (0.65) max. ? 23.5 (0.93) max. c.s. 16 mm 2 (0.025 s.i.) flexible lead 2.6 (0.10) max. 29.5 (1.16) max. 1/2"-20unf-2a sw 27 9.5 (0.37 ) min. white gate amp. 280000-1 ref-250 20 (0.79) min. 29 (1.14) max. 21 (0.83) max. 157 (6.18) 170 (6.69) 70 (2.75) min. 215 10 (8.46 0.39)
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 95078 2 revision: 23-sep-08 outline dimensions vishay semiconductors to-209ac (to-94) fo r st110s series dimensions in millimeters (inches) ceramic housing 1/2"-20unf-2a sw 27 red shrink red cathode red silicon rubber 12.5 (0.49) max. 29 (1.14) max. 21 (0.83) max. 157 (6.18) 170 (6.69) 70 (2.75) min. ? 4.3 (0.17) ? 8.5 (0.33) 16.5 (0.65) max. 29.5 (1.16) max. c.s. 0.4 mm 2 white shrink (0.0006 s.i.) ? 22.5 (0.88) max. white gate 215 10 (8.46 0.39) c.s. 16 mm 2 (0.025 s.i.) flexible lead 2.6 (0.10) max. 9.5 (0.37) min. 20 (0.79) min.
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